APTGF330A60D3G APTGF330A60D3G ? rev 1 september, 2008 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 520 i c continuous collector current t c = 80c 330 i cm pulsed collector current t c = 25c 800 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1560 w rbsoa reverse bias safe operating area t j = 125c 800a @ 520v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com 2 1 3 5 q2 7 6 q1 4 v ces = 600v i c = 330a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant phase leg npt igbt power module
APTGF330A60D3G APTGF330A60D3G ? rev 1 september, 2008 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 500 a t j = 25c 1.95 2.45 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 400a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 7.5 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 1200 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 18 c res reverse transfer capacitance v ge = 0v ; v ce = 25v f = 1mhz 1.6 nf q g gate charge v ge =15v, i c =400a v ce =300v 1.3 c t d(on) turn-on delay time 150 t r rise time 72 t d(off) turn-off delay time 530 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 400a r g = 8 40 ns t d(on) turn-on delay time 160 t r rise time 75 t d(off) turn-off delay time 550 t f fall time inductive switching (125c) v ge = 15v v bus = 300v i c = 400a r g = 8 50 ns e on turn on energy t j = 125c 18 e off turn off energy v ge = 15v v bus = 300v i c = 400a r g = 8 t j = 125c 17 mj i sc short circuit data v ge 15v ; v bus = 360v t p 10s ; t j = 125c 1800 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 750 i rrm maximum reverse leakage current v r = 600v t j = 125c 1000 a i f dc forward current tc = 80c 400 a t j = 25c 1.25 1.6 v f diode forward voltage i f = 400a v ge = 0v t j = 125c 1.2 v t j = 25c 150 t rr reverse recovery time t j = 125c 250 ns t j = 25c 27 q rr reverse recovery charge t j = 125c 44 c t j = 25c 5.6 e rr reverse recovery energy i f = 400a v r = 300v di/dt =4400a/s t j = 125c 9.2 mj
APTGF330A60D3G APTGF330A60D3G ? rev 1 september, 2008 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.08 r thjc junction to case thermal resistance diode 0.15 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m6 3 5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 350 g d3 package outline (dimensions in mm) 1 a dtail a
APTGF330A60D3G APTGF330A60D3G ? rev 1 september, 2008 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 200 400 600 800 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 200 400 600 800 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 200 400 600 800 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 10 20 30 40 0 200 400 600 800 i c (a) e (mj) v ce = 300v v ge = 15v r g = 8 ? t j = 125c eon eoff err 0 10 20 30 40 50 0 10203040 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 400a t j = 125c switching energy losses vs gate resistance reverse safe operating area 0 200 400 600 800 1000 0 100 200 300 400 500 600 v ce (v) i c (a) v ge =15v t j =125c r g =8 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGF330A60D3G APTGF330A60D3G ? rev 1 september, 2008 www.microsemi.com 5-5 hard switching zcs zvs 0 10 20 30 40 50 60 70 0 100 200 300 400 500 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =8 ? t j =125c t c =75c operating frequency vs collector current forward characteristic of diode t j =25c t j =125c 0 200 400 600 800 0 0.3 0.6 0.9 1.2 1.5 v f (v) i f (a) maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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